Electron trapping in ferroelectric HfO2

Reversible spin texture in ferroelectric HfO2

HfO2-based ferroelectric modulator of terahertz waves with graphene metamaterial∗

Tunable modulations of terahertz waves in a graphene/ferroelectric-layer/silicon hybrid structure are demonstrated at low bias voltages. The modulation is due to the creation/elimination of an extra barrier in Si layer in response to the polarization in the ferroelectric Si:HfO2 layer. Considering the good compatibility of HfO2 with the Si-based semiconductor process, the highly tunable charact...

Ferroelectric electron holography.

Ferroelectrics are increasingly important as materials in semiconductor technology, e.g. for building non-volatile memory chips. For optimisation of the properties of such devices, there is an urgent need for methods, which analyse the ferroelectric properties at nanometer scale. Furthermore, the basic understanding of the interaction of ferroelectrics with electrons in the transmission electro...

Oxygen self-diffusion in HfO2 studied by electron spectroscopy.

High-resolution measurement of the energy of electrons backscattered from oxygen atoms makes it possible to distinguish between (18)O and (16)O isotopes as the energy of elastically scattered electrons depends on the mass of the scattering atom. Here we show that this approach is suitable for measuring oxygen self-diffusion in HfO2 using a Hf(16)O2 (20 nm)/Hf(18)O2 bilayers (60 nm). The mean de...

Extrinsic and intrinsic charge trapping at the graphene/ferroelectric interface.

The interface between graphene and the ferroelectric superlattice PbTiO3/SrTiO3 (PTO/STO) is studied. Tuning the transition temperature through the PTO/STO volume fraction minimizes the adorbates at the graphene/ferroelectric interface, allowing robust ferroelectric hysteresis to be demonstrated. "Intrinsic" charge traps from the ferroelectric surface defects can adversely affect the graphene c...